Method of forming dielectric layers on a substrate and apparatus therefor
US7910497B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2007 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Jan 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming dielectric layers on a substrate comprising silicon and oxygen are disclosed herein. In some embodiments, a method of forming a dielectric layer on a substrate includes provide a substrate having an exposed silicon oxide layer; treating an upper surface of the silicon oxide layer with a plasma; and depositing a silicon nitride layer on the treated silicon oxide layer via atomic layer deposition. The silicon nitride layer may be exposed to a plasma nitridation process. The silicon oxide and silicon nitride layers may be subsequently thermally annealed. The dielectric layers may be used as part of a gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.