Direct real-time monitoring and feedback control of RF plasma output for wafer processing
US7910853B2 · kind B2 · utility
0Cited by
8References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 28, 2008 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Feb 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3299
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for controlling power output of a capacitatively-coupled plasma are provided. A detector is disposed on the power delivery conduit carrying power to one electrode to detect fluctuations in power output to the electrode. The detector is coupled to a signal generator, which converts the RF input signal to a constant control signal. A controller adjusts power input to the RF generator by comparing the control signal to a reference.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.