Phase change memory with tapered heater
US7910911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2009 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Jul 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
An embodiment of the present invention includes a phase change memory (PCM) structure configurable for use as a nonvolatile storage element. The element includes at least one bottom electrode; at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; and at least one heater layer on at least a portion of an upper surface of the phase change material layer, wherein the heater layer has a tapered shape such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.