Nickel tin bonding system with barrier layer for semiconductor wafers and devices
US7910945B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2007 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Oct 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.