MOS transistor having an increased gate-drain capacitance

US7910983B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Armin Willmeroth · Friedberg, DE
• Michael Treu · Villach, AT

Key dates

• Filing date: Sep 30, 2008
• Grant date: Mar 22, 2011
• Expiry date: Sep 30, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source zone separated from the drift zone by the body zone, and a gate electrode, which is arranged adjacent to the body zone and which is dielectrically insulated from the body zone by a gate dielectric. At least one compensation zone of the first conduction type is arranged in the drift zone. At least one feedback electrode is arranged at a distance from the body zone, which is dielectrically insulated from the drift zone by a feedback dielectric and which is electrically conductively connected to the gate electrode.