Edge termination for semiconductor devices
US7911021B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2009 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Apr 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/665
Abstract
A high-voltage termination structure includes a peripheral voltage-spreading network. One or more trench structures are connected at least partly in series between first and second power supply voltages. The trench structures include first and second current-limiting structures connected in series with a semiconductor material, and also includes permanent charge in a trench-wall dielectric. The current-limiting structures in the trench structures are jointly connected in a series-parallel ladder configuration. The current-limiting structures, in combination with the semiconductor material, provide a voltage distribution between the core portion and the edge portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.