Scalable quantum well device and method for manufacturing the same

US7915608B2 · kind B2 · utility

Assignees

• IMEC · BE
• Katholieke Universiteit Leuven · BE

Inventors

• Geert Hellings · Halle, BE
• Geert Eneman · Heverlee, BE
• Marc Meuris · Keerbergen, BE

Key dates

• Filing date: May 8, 2009
• Grant date: Mar 29, 2011
• Expiry date: Aug 1, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A quantum well device and a method for manufacturing the same are disclosed. In one aspect, the device includes a quantum well region overlying a substrate, a gate region overlying a portion of the quantum well region, a source and drain region adjacent to the gate region. The quantum well region includes a buffer structure overlying the substrate and including semiconductor material having a first band gap, a channel structure overlying the buffer structure including a semiconductor material having a second band gap, and a barrier layer overlying the channel structure and including an un-doped semiconductor material having a third band gap. The first and third band gap are wider than the second band gap. Each of the source and drain region is self-aligned to the gate region and includes a semiconductor material having a doped region and a fourth band gap wider than the second band gap.