Apparatus and methods for forming a modulation doped non-planar transistor

US7915642B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Ravi Pillarisetty · Portland, US
• Mantu K. Hudait · Portland, US
• Marko Radosavljevic · Portland, US
• Willy Rachmady · Beaverton, US
• Gilbert Dewey · Beaverton, US
• Jack T. Kavalieros · Portland, US

Key dates

• Filing date: Dec 30, 2008
• Grant date: Mar 29, 2011
• Expiry date: Jul 24, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed.