Integrated circuits having a contact region and methods for manufacturing the same

US7915667B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Roman Knoefler · Villach, AT
• Michael Specht · Munich, DE
• Franz Hofmann · Munich, DE
• Florian Beug · Dresden, DE
• Dirk Manger · Dresden, DE
• Stephan Riedel · Frankfurt am Main, DE

Key dates

• Filing date: Jun 11, 2008
• Grant date: Mar 29, 2011
• Expiry date: May 9, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D88/01

Abstract

In an embodiment, an integrated circuit having a memory cell arrangement is provided. The memory cell arrangement may include a substrate, a fin structure disposed above the substrate, and a memory cell contacting region. The fin structure may include a memory cell region having a plurality of memory cell structures being disposed above one another, each memory cell structure having an active region of a respective memory cell. Furthermore, the memory cell contacting region may be configured to electrically contact each of the memory cell structures, wherein the memory cell contacting region may include a plurality of contact regions, which are at least partially displaced with respect to each other in a direction parallel to the main processing surface of the substrate.