Semiconductor device having trench shield electrode structure
US7915672B2 · kind B2 · utility
12Cited by
13References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 14, 2008 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Jul 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
In one embodiment, a structure for a semiconductor device having a trench shield electrode includes a control pad, control runners, shield runners, and a control/shield electrode contact structure. The structure is configured to use a single level of metal to connect the various components. In another embodiment, a shield runner is placed in an offset from center configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.