Tunneling magnetic sensor including platinum layer and method for producing the same
US7916436B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2007 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Jan 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3277
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A tunneling magnetic sensor includes a platinum layer between a pinned magnetic layer and an insulating barrier layer. The platinum layer can probably vary the barrier height (potential height) and barrier width (potential width) of the insulating barrier layer to reduce the absolute value of VCR, thus providing higher operating stability than known tunneling magnetic sensors. In addition, the insulating barrier layer can achieve increased flatness at its bottom interface (where the insulating barrier layer starts to be formed). The tunneling magnetic sensor can therefore provide a higher rate of resistance change (ΔR/R) at low RA than known tunneling magnetic sensors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.