Dynamic soft program trims
US7920427B2 · kind B2 · utility
9Cited by
7References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 13, 2009 |
| Grant date | Apr 5, 2011 |
| Priority date | — |
| Expiry date | Jun 20, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/344
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methods are disclosed for modifying soft-programming trims of a non-volatile memory device, such as a flash memory device. The soft-programming trims may be modified based on a count of erase pulses applied to memory cells of the memory device. The number of erase pulses used to erase memory cells may be indicative of accumulated charge in the memory cell. The start voltage, step size, pulse width, number of pulses, pulse ramp, ramp rate, or any other trim of the soft-programming operation may be modified in response to the number of erase pulses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.