Inventor · Boise, ID, US

Todd A. Marquart

35Patents
6h-index
26Co-inventors
65Inventor score

Filing activity: Aug 31, 2005 → Feb 13, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7292476B2 Programming method for NAND EEPROM Physics 98 Expired
US7408810B2 Minimizing effects of program disturb in a memory device Physics 92 Active
US7499330B2 Programming method for NAND EEPROM Physics 18 Active
US7920427B2 Dynamic soft program trims Physics 9 Active
US8320185B2 Lifetime markers for memory devices Physics 7 Active
US9183070B2 Resting blocks of memory cells in response to the blocks being deemed to fail Physics 7 Active
US7619931B2 Program-verify method with different read and verify pass-through voltages Physics 6 Active
US8804428B2 Determining system lifetime characteristics Physics 5 Active
US7715234B2 Reducing effects of program disturb in a memory device Physics 5 Active
US8199585B2 Dynamic soft program trims Physics 4 Active
US10846165B2 Adaptive scan frequency for detecting errors in a memory system Physics 2 Active
US11385819B2 Separate partition for buffer and snapshot memory Physics 1 Active
US11360700B2 Partitions within snapshot memory for buffer and snapshot memory Physics 1 Active
US11288160B2 Threshold voltage distribution adjustment for buffer Physics 1 Active
US11301346B2 Separate trims for buffer and snapshot Emerging Cross-Sectional Technologies 1 Active
US11556267B2 Data management during a copyback operation Physics 0 Active
US11789629B2 Separate partition for buffer and snapshot memory Physics 0 Active
US11437111B2 Trims corresponding to program/erase cycles Physics 0 Active
US8023329B2 Reducing effects of program disturb in a memory device Physics 0 Active
US11775208B2 Partitions within snapshot memory for buffer and snapshot memory Physics 0 Active
US11487436B2 Trims corresponding to logical unit quantity Physics 0 Active
US11650750B2 Performing asynchronous scan operations across memory subsystems Physics 0 Active
US12061518B2 Parity data in dynamic random access memory (DRAM) Physics 0 Active
US11663104B2 Threshold voltage distribution adjustment for buffer Physics 0 Active
US12118229B2 Memory sub-system event log management Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.