Method for forming self-aligned thermal isolation cell for a variable resistance memory array

US7923285B2 · kind B2 · utility

Assignee

• MACRONIX INTERNATIONAL CO., LTD. · TW

Inventors

• Erh-Kun Lai · Taichung, TW
• ChiaHua Ho
• Kuang Yeu Hsieh · Hsinchu, TW

Key dates

• Filing date: Jan 9, 2009
• Grant date: Apr 12, 2011
• Expiry date: Jan 9, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A non-volatile memory with a self-aligned RRAM element includes a lower electrode element, generally planar in form, having an inner contact surface; an upper electrode element, spaced from the lower electrode element; a containment structure extends between the upper electrode element and the lower electrode element, with a sidewall spacer element having a generally funnel-shaped central cavity with a central aperture; and a spandrel element positioned between the sidewall spacer element and the lower electrode. A RRAM element extends between the lower electrode element and the upper electrode, occupying at least a portion of the sidewall spacer element central cavity and projecting from the sidewall spacer terminal edge toward and making contact with the lower electrode. In this manner, the spandrel element inner surface is spaced from the RRAM element to define a thermal isolation cell adjacent the RRAM element.