Methods of fabricating vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors

US7923320B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventor

• Sei-Hyung Ryu · Cary, US

Key dates

• Filing date: Feb 21, 2007
• Grant date: Apr 12, 2011
• Expiry date: Feb 17, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an n-type silicon carbide drift layer, a first p-type silicon carbide region adjacent the drift layer and having a first n-type silicon carbide region therein, an oxide layer on the drift layer, and an n-type silicon carbide limiting region disposed between the drift layer and a portion of the first p-type region. The limiting region may have a carrier concentration that is greater than the carrier concentration of the drift layer. Methods of fabricating silicon carbide MOSFET devices are also provided.