Method and apparatus for treating a semi-conductor substrate
US7923383B2 · kind B2 · utility
1Cited by
14References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2003 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Apr 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02164
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method of treating a semiconductor wafer and in particular, but not exclusively, to planarisation. The method consists of depositing a liquid short-chain polymer formed from a silicon containing bas or vapour. Subsequently water and OH are removed and the layer is stabilised.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.