Edge termination with improved breakdown voltage
US7923804B2 · kind B2 · utility
8Cited by
17References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2009 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Dec 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.