Patent · US Active

Method of producing a porous dielectric element and corresponding dielectric element

US7923820B2 · kind B2 · utility

7Cited by

3References

17Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Simon Jeannot · Grenoble, FR
Laurent Favennec · Meylan, FR

Key dates

Filing date	Apr 22, 2010
Grant date	Apr 12, 2011
Priority date	—
Expiry date	Apr 22, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A porous dielectric element is produced by forming a first dielectric and a second dielectric. The second dielectric is dispersed in the first dielectric. The second dielectric is then removed from the second dielectric by using a chemical dissolution. The removal of the second dielectric from the first dielectric leaves pores in the first dielectric. The pores, which are filled with air, improve the overall dielectric constant of the resulting dielectric element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.