Programming of analog memory cells using a single programming pulse per state transition
US7924587B2 · kind B2 · utility
22Cited by
225References
28Claims
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Key dates
| Filing date | Feb 19, 2009 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Feb 19, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for data storage in analog memory cells includes defining multiple programming states for storing data in the analog memory cells. The programming states represent respective combinations of more than one bit and correspond to respective, different levels of a physical quantity stored in the memory cells. The data is stored in the memory cells by applying to the memory cells programming pulses that cause the levels of the physical quantity stored in the memory cells to transition between the programming states, such that a given transition is caused by only a single programming pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.