Polishing system with in-line and in-situ metrology
US7927182B2 · kind B2 · utility
5Cited by
79References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 4, 2009 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Sep 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.