SOI semiconductor device with body contact and method thereof
US7927934B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2007 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Oct 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method including providing a substrate and providing an insulating layer overlying the substrate is provided. The method further includes providing a body region comprising a body material overlying the insulating layer. The method further includes forming at least one transistor overlying the insulating layer, the at least one transistor having a source, a drain and a gate with a sidewall spacer, the sidewall spacer comprising a substantially uniform geometric shape around the gate, the gate overlying the body region. The method further includes forming a first silicide region within the source and a second silicide region within the drain, the first silicide region having a differing geometric shape than the second silicide region and being electrically conductive between the body region and the source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.