Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby

US7927959B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Steven J. Keating · Beaverton, US
• Nick Lindert · Beaverton, US
• Nadia M. Rahhal-Orabi · Hillsboro, US
• Brian S. Doyle · Portland, US
• Satyarth Suri · Hillsboro, US
• Swaminathan Sivakumar · Portland, US
• Lana Jong · Hillsboro, US
• Lin Sha · Portland, US

Key dates

• Filing date: Sep 30, 2008
• Grant date: Apr 19, 2011
• Expiry date: Aug 8, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/043
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.