Charged particle beam apparatus and sample manufacturing method
US7928377B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2005 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Jun 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31749
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
It is possible to carry out a highly accurate thin film machining by irradiation of an ion beam to a sample and a high-resolution STEM observation of the sample by irradiating an electron beam with a high throughput almost without moving the sample. The FIB irradiation system has an irradiation axis almost orthogonally intersecting an irradiation axis of the STEM observation electron beam irradiation system. The sample is arranged at the intersection point of the irradiation axes. The FIB machining plane of the sample is extracted from the thin film plane of the STEM observation sample. The transmitting/scattered beam detector are arranged at backward of the sample on the electron beam irradiation axis viewed from the electron beam irradiation direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.