Ion implanters
US7928413B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2008 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Feb 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/04756
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to components in an ion implanter that may see incidence of the ion beam, such as a beam dump or a beam stop. Such components will be prone to the ions sputtering material from their surfaces, and sputtered material may become entrained in the ion beam. This entrained material is a source of contamination. The present invention provides an ion implanter comprising power supply apparatus and an ion-receiving component. The component has an opening that receives ions from an ion beam such that ions strike an internal surface. The power supply apparatus is arranged to provide an electrical bias to the internal surface to decelerate the ions prior to their striking the surface, thereby mitigating the problem of material being sputtered from the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.