Patent · US Active

Power electronic device

US7928553B2 · kind B2 · utility

3Cited by

10References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ralf Otremba · Kaufbeuren, DE
Oliver Haeberlen · Villach, AT
Klaus Schiess · Allensbach, DE

Key dates

Filing date	Aug 2, 2010
Grant date	Apr 19, 2011
Priority date	—
Expiry date	Aug 2, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An electronic device and method is disclosed. In one embodiment, a method includes providing an electrically insulating substrate. A first electrically conductive layer is applied over the electrically insulating substrate. A first semiconductor chip is placed over the first electrically conductive layer. The first semiconductor chip comprises a first electrode on a first main surface and a second electrode on a second main surface. An electrically insulating layer is applied over the first electrically conductive layer. A second electrically conductive layer is applied over the electrically insulating layer. A through connection is provided in the electrically insulating layer to couple the first electrically conductive layer to the second electrically conductive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.