Semiconductor device with a high thermal dissipation efficiency
US7928565B2 · kind B2 · utility
68Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2010 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Feb 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1461
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a higher thermal dissipation efficiency includes a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.