Patent · US Active

Wafer level burn-in and electrical test system and method

US7928754B2 · kind B2 · utility

0Cited by
56References
5Claims
0Family size

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Key dates

Filing dateOct 6, 2009
Grant dateApr 19, 2011
Priority date
Expiry dateOct 6, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05K3/4691
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A burn-in and electrical test system (20) includes a temperature controlled zone (22) and a cool zone (24) separated by a transition zone 25. The temperature controlled zone (22) is configured to receive a plurality of wafer cartridges (26) and connect the cartridges (26) to test electronics (28) and power electronics (30), which are mounted in the cool zone (24). Each of the wafer cartridges (26) contains a semiconductor wafer incorporating a plurality of integrated circuits. The test electronics (28) consists of a pattern generator PCB (100) and a signal driver and fault analysis PCB (102) connected together by a parallel bus (104). The pattern generator PCB (100) and the fault analysis PCB (102) are connected to a rigid signal probe PCB (104) in cartridge (26) to provide a straight through signal path. The probe PCB (104) is rigid in order to allow close control of capacitance between each signal line and a backplane, thus providing impedance controlled interconnections between a semiconductor wafer under test and the test electronics (28). The power distribution system (30) is connected to a probe power PCB (106) in the cartridge (26). The probe power PCB (106) has at least a b…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.