Measurement structure in a standard cell for controlling process parameters during manufacturing of an integrated circuit

US7930660B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Erwin Ruderer · Borgo San Lazzaro, DE
• Walther Lutz · Erding, DE
• Roswitha Deppe · Munich, DE

Key dates

• Filing date: Jan 30, 2008
• Grant date: Apr 19, 2011
• Expiry date: Jun 27, 2029

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/84
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Implementations are presented herein that relate to a standard cell including a measuring structure for controlling process parameters during manufacture of an integrated circuit. A standard cell is formed in a plurality of material layers of an integrated circuit to perform part of a function of the integrated circuit, wherein the plurality of material layers is configured to be patterned by a plurality of mask layers during manufacture of the integrated circuit, wherein the standard cell includes a measuring structure that is placed within boundaries of the standard cell, wherein the measuring structure includes at least one feature in at least one of the plurality of material layers and the plurality of mask layers, wherein the at least one feature is configured to provide measurement results in order to control process parameters during manufacture of one of the material layers and mask layers.