Phase change memory element

US7932509B2 · kind B2 · utility

Assignee

• Industrial Technology Research Institute · TW

Inventors

• Wei-Su Chen · Hsinchu, TW
• Chih-Wei Chen · Tainan, TW
• Frederick Chen · Hsinchu, TW

Key dates

• Filing date: Sep 5, 2008
• Grant date: Apr 26, 2011
• Expiry date: Mar 20, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

A phase change memory device is disclosed, including a substrate. The phase change memory also includes a bottom electrode. A conductive structure with a cavity is provided to electrically contact the bottom electrode, wherein the conductive structure includes sidewalls with different thicknesses. A phase change spacer is formed to cross the sidewalls with different thicknesses. A top electrode is electrically contacted to the phase change spacer.