Layer transfer using boron-doped SiGe layer

US7935612B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Stephen W. Bedell · Wappingers Falls, US
• Keith E. Fogel · Potsdam, US
• Daniel A. Inns · Palo Alto, US
• Jeehwan Kim · White Plains, US
• Devendra K. Sadana · Pleasantville, US
• James Vichiconti · Carmel, US

Key dates

• Filing date: Feb 5, 2010
• Grant date: May 3, 2011
• Expiry date: Feb 5, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/187
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for layer transfer using a boron-doped silicon germanium (SiGe) layer includes forming a boron-doped SiGe layer on a bulk silicon substrate; forming an upper silicon (Si) layer over the boron-doped SiGe layer; hydrogenating the boron-doped SiGe layer; bonding the upper Si layer to an alternate substrate; and propagating a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate. A system for layer transfer using a boron-doped silicon germanium (SiGe) layer includes a bulk silicon substrate; a boron-doped SiGe layer formed on the bulk silicon substrate, such that the boron-doped SiGe layer is located underneath an upper silicon (Si) layer, wherein the boron-doped SiGe layer is configured to propagate a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate after hydrogenation of the boron-doped SiGe layer; and an alternate substrate bonded to the upper Si layer.