Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
US7935953B2 · kind B2 · utility
9Cited by
13References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 2, 2007 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Jul 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a middle electrode disposed on the resistor structure, a diode structure disposed on the middle electrode, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory device as described above. Methods of manufacturing a nonvolatile memory device and an array of nonvolatile memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.