Power semiconductor having a lightly doped drift and buffer layer

US7936010B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Markus Zundel · Egmating, DE
• Franz Hirler · Isen, DE
• Armin Willmeroth · Friedberg, DE

Key dates

• Filing date: Dec 23, 2008
• Grant date: May 3, 2011
• Expiry date: Dec 23, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger than a breakdown charge amount at breakdown voltage.