Inhibitors for selective deposition of silicon containing films
US7939447B2 · kind B2 · utility
510Cited by
94References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2007 |
| Grant date | May 10, 2011 |
| Priority date | — |
| Expiry date | Jul 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02636
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for decelerating reactions between the silicon precursor and the chlorine-containing etchant; and selectively depositing a doped crystalline Si-containing film onto the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.