Method for fabricating a pattern
US7939451B2 · kind B2 · utility
7Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2007 |
| Grant date | May 10, 2011 |
| Priority date | — |
| Expiry date | Aug 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a patter is provided as followed. First, a material layer is provided, whereon a patterned hard mask layer is formed. A spacer is deposited on the sidewalls of the patterned hard mask layer. Then, the patterned hard mask layer is removed, and an opening is formed between the adjacent spacers. Afterwards, a portion of the material layer is removed to form a patterned material layer by using the spacer as mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.