Method for forming strained silicon nitride films and a device containing such films
US7939455B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 29, 2006 |
| Grant date | May 10, 2011 |
| Priority date | — |
| Expiry date | Apr 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a strained SiN film and a semiconductor device containing the strained SiN film. The method includes exposing the substrate to a gas including a silicon precursor. The substrate is exposed to a gas including a first nitrogen precursor configured to react with the silicon precursor with a first reactivity characteristic. The substrate is also exposed to a gas including a second nitrogen precursor configured to react with the silicon precursor with a second reactivity characteristic different than the first reactivity characteristic such that a property of the SiN film formed on the substrate changes to provide a strained SiN film. According to another embodiment, the substrate is exposed to a gas pulse containing a silicon precursor and first and second nitrogen precursors, wherein the ratio of the first and second precursors is varied during the exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.