Semiconductor die having a redistribution layer
US7939944B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2010 |
| Grant date | May 10, 2011 |
| Priority date | — |
| Expiry date | Jul 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a redistribution layer, and methods of forming same, are disclosed. After fabrication of semiconductor die on a wafer, a tape assembly is applied onto a surface of the wafer, in contact with the surfaces of each semiconductor die on the wafer. The tape assembly includes a backgrind tape as a base layer, and a film assembly adhered to the backgrind tape. The film assembly in turn includes an adhesive film on which is deposited a thin layer of conductive material. The redistribution layer pattern is traced into the tape assembly, using for example a laser. Thereafter, the unheated portions of the tape assembly may be removed, leaving the heated redistribution layer pattern on each semiconductor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.