Method of cleaning a film-forming apparatus
US7942974B2 · kind B2 · utility
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2References
17Claims
0Family size
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Key dates
| Filing date | Sep 26, 2005 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Jul 2, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.