Step and repeat imprint lithography processes
US7943081B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Apr 19, 2010 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Apr 19, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0002
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods of forming continuous layers on regions of a substrate are described. Generally, an imprint lithography template may contact liquid positioned on the substrate. The liquid may be cured forming a masking layer, and the imprint lithography template separated from the masking layer. Prior to separation, pressurized gas and/or vacuum may be applied between the template and the substrate. Additionally, during separation, pressurized gas and/or vacuum may be applied between the template and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.