Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US7943204B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2006 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Feb 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/082
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.