Surface preparation for thin film growth by enhanced nucleation
US7943527B2 · kind B2 · utility
23Cited by
39References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2009 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Dec 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02315
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Various processes and related systems are provided for making structures on substrate surfaces. Disclosed are methods of making a structure supported by a substrate by providing a substrate having a receiving surface and exposing at least a portion of the receiving surface to output from a remote plasma of an inert gas. The remote plasma has an energy low enough to substantially avoid etching or sputtering of the receiving surface but sufficient to generate a treated receiving surface. The treated surface is contacted with a deposition gas, thereby making the structure supported by the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.