Method for fabricating a body contact in a finfet structure and a device including the same
US7943986B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2007 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Sep 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6711
Abstract
A method for fabricating a Finfet device with body contacts and a device fabricated using the method are provided. In one example, a silicon-on-insulator substrate is provided. A T-shaped active region is defined in the silicon layer of the silicon-on-insulator substrate. A source region and a drain region form two ends of a cross bar of the T-shaped active region and a body contact region forms a leg of the T-shaped active region. A gate oxide layer is grown on the active region. A polysilicon layer is deposited overlying the gate oxide layer and patterned to form a gate, where an end of the gate partially overlies the body contact region to complete formation of a Finfet device with body contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.