Double sided semiconduction device with edge contact and package therefor
US7944035B2 · kind B2 · utility
10Cited by
12References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 16, 2007 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | May 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor die has devices such as MOSgated devices, diodes and the like formed into the top and bottom surfaces of the die. One terminal of each of the devices terminal in the interior center of the die and a common contact is made to the interior center of the die at one edge of the die. Various packages for the die having a reduced foot print on a support substrate are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.