Programming a memory cell with a diode in series by applying reverse bias
US7944728B2 · kind B2 · utility
10Cited by
14References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2008 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Jul 17, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a memory cell comprises applying a reverse bias to the memory cell using a temporary resistor in series with the memory cell. The memory cell comprises a diode and a resistivity switching material element in series. The state of the resistivity switching material element changes from a first initial state to a second state different from the first state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.