Room temperature drift suppression via soft program after erase
US7944746B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2007 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Mar 5, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3409
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Providing for suppression of room temperature electronic drift in a flash memory cell is provided herein. For example, a soft program pulse can be applied to the flash memory cell immediately after an erase pulse. The soft program pulse can help to mitigate dipole effects caused by non-combined electrons and holes in the memory cell. Specifically, by utilizing a relatively low gate voltage, the soft program pulse can inject electrons into the flash memory cell proximate a distribution of uncombined holes associated with the erase pulse in order to facilitate rapid combination of such particles. Rapid combination in this manner reduces dipole effects caused by non-combined distributions of opposing charge within the memory cell, reducing room temperature program state drift.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.