Inventor · San Jose, CA, US

Mark Randolph

87Patents
20h-index
110Co-inventors
87Inventor score

Filing activity: Dec 16, 1997 → Oct 10, 2013

Most-cited inventions

PatentTitleAreaCited byStatus
US6642573B1 Use of high-K dielectric material in modified ONO structure for semiconductor devices Emerging Cross-Sectional Technologies 174 Expired
US6275414A Uniform bitline strapping of a non-volatile memory cell Electricity 111 Expired
US7365389B1 Memory cell having enhanced high-K dielectric Electricity 76 Expired
US6639844B1 Overerase correction method Physics 61 Expired
US6639271B1 Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same Electricity 57 Expired
US5907781A Process for fabricating an integrated circuit with a self-aligned contact Electricity 41 Expired
US6768160B1 Non-volatile memory cell and method of programming for improved data retention Electricity 41 Expired
US6735114B1 Method of improving dynamic reference tracking for flash memory unit Physics 37 Expired
US6538270B1 Staggered bitline strapping of a non-volatile memory cell Electricity 37 Expired
US6744675B1 Program algorithm including soft erase for SONOS memory device Physics 36 Expired
US6593606B1 Staggered bitline strapping of a non-volatile memory cell Electricity 35 Expired
US7619932B2 Algorithm for charge loss reduction and Vt distribution improvement Physics 34 Active
US6967873B2 Memory device and method using positive gate stress to recover overerased cell Physics 34 Expired
US6834012B1 Memory device and methods of using negative gate stress to correct over-erased memory cells Physics 34 Expired
US7120063B1 Flash memory cell and methods for programming and erasing Electricity 27 Expired
US6693321B1 Replacing layers of an intergate dielectric layer with high-K material for improved scalability Electricity 24 Expired
US7125763B1 Silicided buried bitline process for a non-volatile memory cell Electricity 24 Expired
US8938655B2 Extending flash memory data retension via rewrite refresh Physics 21 Active
US6795357B1 Method for reading a non-volatile memory cell Physics 20 Expired
US6934190B1 Ramp source hot-hole programming for trap based non-volatile memory devices Physics 20 Expired
US6770938B1 Diode fabrication for ESD/EOS protection Electricity 18 Expired
US6822909B1 Method of controlling program threshold voltage distribution of a dual cell memory device Physics 16 Expired
US6958272B2 Pocket implant for complementary bit disturb improvement and charging improvement of SONOS memory cell Emerging Cross-Sectional Technologies 14 Expired
US6477083B1 Select transistor architecture for a virtual ground non-volatile memory cell array Physics 13 Expired
US6465303B1 Method of manufacturing spacer etch mask for silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memory Electricity 13 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.