Mask and method for patterning a semiconductor wafer
US7945869B2 · kind B2 · utility
3Cited by
3References
26Claims
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Key dates
| Filing date | Aug 20, 2007 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Mar 30, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/30
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for generating a mask pattern is provided. A target lithographic pattern comprising a plurality of first geometric regions is provided, wherein the regions between the plurality of first geometric regions comprise first spaces. The target lithographic pattern is transformed, and the transformed pattern is decomposed into a first pattern and a second pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.