Lithography masks and methods of manufacture thereof

US7947431B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Chandrasekhar Sarma · Poughkeepsie, US
• Alois Gutmann · Poughkeepsie, US
• Henning Haffner · Pawling, US
• Sajan Marokkey · Wappingers Falls, US
• Josef Maynollo · Wappingers Falls, US

Key dates

• Filing date: Jul 30, 2010
• Grant date: May 24, 2011
• Expiry date: Jul 30, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/24479
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of manufacturing a lithography mask. The method includes providing a substrate, forming a first pattern in a first region of the substrate, and forming a second pattern in a second region of the substrate, the second pattern comprising patterns for features oriented differently than patterns for features of the first pattern. The method includes affecting a polarization rotation of light differently in the first region than in the second region of the substrate.