Forming method of porous low-k layer and interconnect process
US7947565B2 · kind B2 · utility
3Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2007 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Jun 13, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24992
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a porous low-k layer is described. A CVD process is conducted to a substrate, wherein a framework precursor and a porogen precursor are supplied. In an end period of the supply of the framework precursor, the value of at least one deposition parameter negatively correlated with the density of the product of the CVD process is decreased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.