Su-Jen Sung
29Patents
4h-index
24Co-inventors
59Inventor score
Filing activity: Feb 7, 2007 → Nov 9, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9852905B2 | Systems and methods for uniform gas flow in a deposition chamber | Electricity | 6 | Active |
| US10163794B2 | Capping layer for improved deposition selectivity | Electricity | 6 | Active |
| US8084357B2 | Method for manufacturing a dual damascene opening comprising a trench opening and a via opening | Electricity | 5 | Active |
| US9041216B2 | Interconnect structure and method of forming the same | Electricity | 5 | Active |
| US9396990B2 | Capping layer for improved deposition selectivity | Electricity | 3 | Active |
| US7947565B2 | Forming method of porous low-k layer and interconnect process | Emerging Cross-Sectional Technologies | 3 | Active |
| US9530728B2 | Semiconductor devices and methods of manufacture thereof | Electricity | 2 | Active |
| US10510666B2 | Interconnect structure and method of forming same | Electricity | 2 | Active |
| US9490209B2 | Electro-migration barrier for Cu interconnect | Electricity | 2 | Active |
| US8350246B2 | Structure of porous low-k layer and interconnect structure | Emerging Cross-Sectional Technologies | 1 | Active |
| US9129965B2 | Semiconductor devices and methods of manufacture thereof | Electricity | 1 | Active |
| US9355894B2 | Interconnect structure and method of forming the same | Electricity | 0 | Active |
| US10867920B2 | Electro-migration barrier for Cu interconnect | Electricity | 0 | Active |
| US11670546B2 | Semiconductor structure and manufacturing method thereof | Electricity | 0 | Active |
| US12211766B2 | Highly protective wafer edge sidewall protection layer | Electricity | 0 | Active |
| US12094930B2 | Integrated circuit structure and method for forming the same | Electricity | 0 | Active |
| US12046557B2 | Interconnect structure and method of forming same | Electricity | 0 | Active |
| US11515255B2 | Electro-migration barrier for interconnect | Electricity | 0 | Active |
| US11532548B2 | Nitrogen plasma treatment for improving interface between etch stop layer and copper interconnect | Electricity | 0 | Active |
| US10163795B2 | Electro-migration barrier for Cu interconnect | Electricity | 0 | Active |
| US11502035B2 | Interconnect structure and method of forming same | Electricity | 0 | Active |
| US12255095B2 | Semiconductor structure and manufacturing method thereof | Electricity | 0 | Active |
| US11923304B2 | Electro-migration barrier for interconnect | Electricity | 0 | Active |
| US11282742B2 | Semiconductor device with multi-layer etch stop structure and method for forming the same | Electricity | 0 | Active |
| US11264328B2 | Capping layer for improved deposition selectivity | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.