Method for fabricating a semiconductor on insulator substrate with reduced Secco defect density
US7947571B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2009 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Jun 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for fabricating a semiconductor on insulator substrate, in particular a silicon on insulator substrate by providing a source substrate, providing a predetermined splitting area inside the source substrate by implanting atomic species, bonding the source substrate to a handle substrate, detaching a remainder of the source substrate from the source-handle component at the predetermined splitting area to thereby transfer a device layer of the source substrate onto the handle substrate, and thinning of the device layer. To obtain semiconductor on insulator substrates with a reduced Secco defect density of less than 100 per cm2 the implanting is carried out with a dose of less than 2.3×106 atoms per cm2 and the thinning is an oxidation step conducted at a temperature of less than 925° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.